Semiconductors Practice Questions
20 free Semiconductors practice questions for the General Science. Tap an option to answer — you get instant feedback, the correct answer, and a detailed explanation for every question.
Which of the following materials is commonly used as an intrinsic semiconductor?
- A Silicon
- B Copper
- C Iron
- D Aluminum
Correct answer: Silicon
Silicon is a widely used intrinsic semiconductor because its electrical conductivity lies between that of conductors and insulators. It has four valence electrons, which form covalent bonds in a crystal lattice, allowing controlled conductivity when energy is supplied.
In an intrinsic semiconductor, the number of electrons is equal to the number of:
- A Holes
- B Protons
- C Neutrons
- D Ions
Correct answer: Holes
In intrinsic semiconductors, electrons excited to the conduction band leave behind vacancies called holes in the valence band. Each excited electron creates exactly one hole, so the number of electrons equals the number of holes.
Which type of semiconductor is formed by adding a small amount of impurity to a pure semiconductor crystal?
- A Extrinsic semiconductor
- B Intrinsic semiconductor
- C Compound semiconductor
- D Metallic conductor
Correct answer: Extrinsic semiconductor
Extrinsic semiconductors are created by introducing impurities into a pure semiconductor through a process called doping. These impurities increase the number of free charge carriers, enhancing conductivity.
Which impurity is commonly used to produce an n-type semiconductor from silicon?
- A Phosphorus
- B Boron
- C Gallium
- D Aluminum
Correct answer: Phosphorus
Phosphorus is a pentavalent impurity with five valence electrons. When added to silicon, it contributes an extra free electron, increasing electron concentration and producing an n-type semiconductor.
The majority charge carriers in an n-type semiconductor are:
- A Holes
- B Positively charged ions
- C Negatively charged ions
- D Electrons
Correct answer: Electrons
In n-type semiconductors, pentavalent impurities donate extra electrons to the conduction band. As a result, electrons become the majority charge carriers, while holes are the minority carriers.
Which impurity is typically used to produce a p-type semiconductor?
- A Boron
- B Phosphorus
- C Arsenic
- D Tin
Correct answer: Boron
Boron is a trivalent impurity with three valence electrons. When doped into silicon, it creates a deficiency of electrons, resulting in holes that act as the majority charge carriers in a p-type semiconductor.
The majority charge carriers in a p-type semiconductor are:
- A Electrons
- B Holes
- C Protons
- D Ions
Correct answer: Holes
In p-type semiconductors, trivalent impurities create vacancies called holes in the valence band. These holes behave like positive charge carriers and dominate electrical conduction.
What is the energy gap in a semiconductor?
- A Energy difference between conduction band and valence band
- B Energy required to remove an electron from an isolated atom
- C Energy stored in the bond between two neighbouring atoms
- D Energy released when an electron and a hole recombine
Correct answer: Energy difference between conduction band and valence band
The energy gap, or band gap, is the energy difference between the valence band and the conduction band. Electrons must gain at least this amount of energy to move into the conduction band and contribute to electrical conduction.
Which of the following materials has the smallest energy band gap?
- A Germanium
- B Silicon
- C Diamond
- D Gallium arsenide
Correct answer: Germanium
Germanium has a band gap of about 0.67 eV, compared with roughly 1.1 eV for silicon, about 1.4 eV for gallium arsenide and about 5.5 eV for diamond. The smaller the gap, the less energy an electron needs to reach the conduction band.
Which device is formed by joining p-type and n-type semiconductors?
- A Transistor
- B Diode
- C Capacitor
- D Relay
Correct answer: Diode
A diode is created by forming a junction between p-type and n-type semiconductors. This p-n junction allows current to flow primarily in one direction, making it useful for rectification.
The region around a p-n junction that is depleted of free charge carriers is called the:
- A Conduction region
- B Depletion region
- C Active region
- D Neutral region
Correct answer: Depletion region
The depletion region forms near the p-n junction because electrons and holes recombine there. This leaves behind fixed charged ions, creating a region with very few mobile charge carriers.
Forward biasing a p-n junction means connecting:
- A p-side to positive terminal and n-side to negative terminal
- B p-side to negative terminal and n-side to positive terminal
- C Both sides to positive terminal
- D Both sides to negative terminal
Correct answer: p-side to positive terminal and n-side to negative terminal
In forward biasing, the p-side is connected to the positive terminal and the n-side to the negative terminal of a battery. This reduces the depletion region barrier and allows current to flow easily.
In reverse biasing of a p-n junction, the depletion region:
- A Disappears
- B Remains unchanged
- C Becomes wider
- D Becomes narrower
Correct answer: Becomes wider
Reverse biasing connects the p-side to the negative terminal and the n-side to the positive terminal. This pulls charge carriers away from the junction, increasing the width of the depletion region and restricting current flow.
Which semiconductor device is commonly used as an electronic switch and amplifier?
- A Transistor
- B Diode
- C Transformer
- D Capacitor
Correct answer: Transistor
A transistor is a semiconductor device capable of amplifying signals or acting as an electronic switch. It typically consists of three layers forming either an NPN or PNP structure.
Which of the following is NOT a semiconductor material?
- A Germanium
- B Silicon
- C Copper
- D Boron
Correct answer: Copper
Copper is a metal and a good electrical conductor with freely moving electrons. Semiconductor materials like silicon and germanium have moderate conductivity that can be controlled through doping.
What happens to the conductivity of a semiconductor as temperature increases?
- A It decreases
- B It increases
- C It remains constant
- D It becomes zero
Correct answer: It increases
As temperature increases, more electrons gain enough energy to jump from the valence band to the conduction band. This increases the number of charge carriers and therefore increases conductivity.
Which type of doping introduces atoms with five valence electrons into silicon?
- A Trivalent doping
- B Pentavalent doping
- C Tetravalent doping
- D Intrinsic doping
Correct answer: Pentavalent doping
Pentavalent doping introduces impurities such as phosphorus or arsenic that have five valence electrons. The extra electron becomes free for conduction, creating an n-type semiconductor.
In a p-n junction diode under forward bias, the current is mainly due to the movement of:
- A Majority carriers
- B Minority carriers
- C Fixed dopant ions
- D Photogenerated carriers
Correct answer: Majority carriers
Under forward bias, majority carriers move across the junction. Electrons move from the n-side to the p-side, and holes move from the p-side to the n-side, producing current.
Which of the following best describes a semiconductor?
- A Material with conductivity between conductors and insulators
- B Material that offers almost no resistance to electric current
- C Material that blocks the flow of current completely
- D Material whose resistance rises steadily as it is heated
Correct answer: Material with conductivity between conductors and insulators
Semiconductors have electrical conductivity between that of conductors and insulators. Their conductivity can be controlled by temperature, light, and doping, making them useful in electronic devices.
Gallium arsenide is often used in semiconductor devices because it:
- A Is a strong conductor like copper
- B Has no band gap
- C Is an insulator
- D Has high electron mobility
Correct answer: Has high electron mobility
Gallium arsenide has higher electron mobility than silicon, allowing electrons to move faster through the material. This property makes it useful in high-speed electronic and optoelectronic devices.